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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)- BUT22B 450V(Min)- BUT22C *High Switching Speed APPLICATIONS *Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BUT22B BUT22C BUT22B VCEO Collector-Emitter Voltage BUT22C VEBO IC ICM IB B BUT22B/C VALUE 750 UNIT VCES Collector-Emitter Voltage VBE= 0 V 850 400 V 450 9 8 20 4 6 125 150 -65~150 V A A A A W Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BUT22B IC= 0.1A ;IB= 0; L= 25mH B BUT22B/C CONDITIONS MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 450 BUT22C BUT22B BUT22C BUT22B BUT22C ICES IEBO hFE Collector Cutoff Current Emitter Cutoff Current DC Current Gain IC= 6A; IB= 0.8A B VCE(sat) Collector-Emitter Saturation Voltage 1.5 V 1.5 1.5 V 1.5 1.0 10 25 mA mA IC= 6A; IB= 1.0A B VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.8A B IC= 6A; IB= 1.0A B VCE= VCESmax;VBE= 0 VEB= 9V; IC=0 IC= 1A ; VCE= 5V Switching Times; Resistive Load ton tstg tf Turn-On Time Storage Time Fall Time For BUT22C IC= 6A; IB1= -IB2= 1.0A 1.0 4.5 0.7 s s s For BUT22B IC= 6A; IB1= -IB2= 0.8A isc Websitewww.iscsemi.cn 2 |
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